KINKING AND CRACKING CAUSED BY SLIP IN SINGLE-CRYSTALS OF SILICON-CARBIDE

被引：37

作者：

SUEMATSU, H ^{[1
]}

SUZUKI, T ^{[1
]}

ISEKI, T ^{[1
]}

MORI, T ^{[1
]}

机构：

[1] TOKYO INST TECHNOL,DEPT MAT SCI & ENGN,MIDORI KU,YOKOHAMA,KANAGAWA 227,JAPAN

来源：

JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 1991年 / 74卷 / 01期

关键词：

D O I：

10.1111/j.1151-2916.1991.tb07314.x

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

alpha-SiC single crystals were compressed parallel to the basal plane, (0001), at temperatures between 900-degrees and 1500-degrees-C. Plastic deformation by slip on the basal planes which accompanied kinking occurred above 1000-degrees-C. At kink boundaries, two kinds of cracks were observed. One was the cracks elongated parallel to the basal plane. This kind of crack was initiated by the tensile stress produced by piled-up dislocations on the basal planes against a kink boundary. The other was on a kink boundary, and was induced by the stress of dislocations, heterogeneously distributed on the kink boundary. The initiation of cracks produced by dislocations was considered to be a possible cause of fracture in polycrystalline SiC at high temperatures.

引用

页码：173 / 178

页数：6

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