ULTRA-THIN-BASE SI BIPOLAR-TRANSISTOR USING RAPID VAPOR-PHASE DIRECT DOPING (RVD)

被引：30

作者：

KIYOTA, Y ^{[1
]}

ONAI, T ^{[1
]}

NAKAMURA, T ^{[1
]}

INADA, T ^{[1
]}

KURANOUCHI, A ^{[1
]}

HIRANO, Y ^{[1
]}

机构：

[1] HOSEI UNIV,COLL ENGN,TOKYO 142,JAPAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1992年 / 39卷 / 09期

关键词：

D O I：

10.1109/16.155880

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel doping method called Rapid Vapor-phase direct Doping (RVD) is developed to form ultra-shallow junctions. The base region of a conventional bipolar transistor is formed by this method, and an ultra-narrow 25-nm base is obtained. The Gummel plot of this device shows almost ideal characteristics. This result suggests that this method does not induce any defects which cause a leakage current. RVD is a thermal diffusion method using hydrogen as a carrier gas and B2H6 as a source gas. In this method, the impurity atoms directly diffuse from the vapor phase into silicon by a rapid thermal process without a boron-glass layer or metallic boron layer. By varying the source gas flow rate, doping time, and temperature, ultra-shallow junctions below 40 nm with controlled surface concentrations are successfully formed. An ultra-shallow, 20-nm junction with surface boron concentration of 4 x 10(18) cm-3 is obtained at 800-degrees-C for 5 min with B2H6 flow rate of 30 ml/min.

引用

页码：2077 / 2081

页数：5

共 11 条

[1]

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[2] SI ULTRASHALLOW P+N JUNCTIONS USING LOW-ENERGY BORON IMPLANTATION [J].