SIMPLE-STRUCTURED PMOSFET FABRICATED USING MOLECULAR LAYER DOPING

被引：19

作者：

NISHIZAWA, J

AOKI, K

AKAMINE, T

机构：

[1] Research Institute of Electrical Communication, Tohoku University

[2] R&D Department, Seiko Instruments, Inc., Matsudo-shi

来源：

IEEE ELECTRON DEVICE LETTERS | 1990年 / 11卷 / 03期

关键词：

D O I：

10.1109/55.46948

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Application of a new doping method named molecular layer doping (MLD) to PMOSFET is described in this letter. MLD is based on chemical adsorption and makes it possible to form ultrashallow borondoped layers. A simple-structured PMOSFET has been fabricated, in which source and drain regions are formed by MLD. For comparison, another PMOSFET has also been fabricated by the conventional method. The former is superior to the latter with regard to electrical characteristics in the short-channel region. © © 1990 IEEE

引用

页码：105 / 106

页数：2

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