CONTRIBUTION TO STUDY OF BAND-STRUCTURE OF AMORPHOUS SELENIUM

被引：11

作者：

CARLES, D ^{[1
]}

VAUTIER, C ^{[1
]}

VIGER, C ^{[1
]}

机构：

[1] FAC SCI ROUEN,LAB PHYS COUCHES,78 MT ST AIGNAN,FRANCE

来源：

THIN SOLID FILMS | 1973年 / 17卷 / 01期

关键词：

D O I：

10.1016/0040-6090(73)90006-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：67 / 73

页数：7

共 19 条

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TOURAINE, A ;

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[3]

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[4] SIMPLE BAND MODEL FOR AMORPHOUS SEMICONDUCTING ALLOYS [J].

COHEN, MH ;

FRITZSCHE, H ;

OVSHINSKY, SR .

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[5]

Davis E. A., 1970, Journal of Non-Crystalline Solids, V4, P107, DOI 10.1016/0022-3093(70)90026-8

[6]

Davis E. A., 1970, Journal of Non-Crystalline Solids, V2, P406, DOI 10.1016/0022-3093(70)90157-2

[7] DRIFT MOBILITIES OF ELECTRONS AND HOLES AND SPACE-CHARGE-LIMITED CURRENTS IN AMORPHOUS SELENIUM FILMS [J].

HARTKE, JL .

PHYSICAL REVIEW, 1962, 125 (04) :1177-&

[8]

HARTKE JL, 1965, PHYS REV, V139, P970

[9] TRAPPING OF MINORITY CARRIERS IN SILICON .1. P-TYPE SILICON [J].

HORNBECK, JA ;

HAYNES, JR .

PHYSICAL REVIEW, 1955, 97 (02) :311-321

[10]

Mott N.F., 1969, Festkorperprobleme 9, V9, P22

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