MULTIPLE-QUANTUM-WELL REFLECTION MODULATOR USING A LIFTED-OFF GAAS/ALGAAS FILM BONDED TO GOLD ON SILICON

被引:5
作者
YOFFE, GW
DELL, JM
机构
[1] Telecom Australia Research Laboratories, Clayton, VIC 3168
关键词
MQW REFLECTION MODULATORS;
D O I
10.1049/el:19910351
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A normally-off asymmetric Fabry-Perot reflection modulator using a lifted-off GaAs/AlGaAs multiple-quantum-well structure is reported. The 2-mu-m thick epitaxial layer was bonded to a silicon wafer coated with gold, which served as the rear mirror and as an electrical contact. Modulation ratios of 3.4:1 with 5 V bias and 4.3:1 with 12 V bias were obtained with an insertion loss of 4.3 dB at 12 V.
引用
收藏
页码:557 / 558
页数:2
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