EFFECT OF POST-GROWTH ANNEALING ON PATTERNED GAAS ON SILICON

[1] PROCESSING AND CHARACTERIZATION OF GAAS GROWN INTO RECESSED SILICON [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (02): : 717 - 719

[2] EFFECT OF INSITU AND EXSITU ANNEALING ON DISLOCATIONS IN GAAS ON SI SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1987, 50 (15) : 992 - 994

[3] MOLECULAR-BEAM EPITAXY AND OPTICAL CHARACTERIZATION OF GAAS ON CAF2 SUBSTRATES [J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (01) : 208 - 212

[4] RAMAN CHARACTERIZATION OF TWINNING IN HETEROEPITAXIAL SEMICONDUCTOR LAYERS - GAAS/(CA,SR)F2 [J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (03) : 1025 - 1031

[5] DEFECT REDUCTION BY THERMAL ANNEALING OF GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY ON SI SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1987, 50 (01) : 31 - 33

[6] MICROSTRUCTURAL CHARACTERIZATION OF PATTERNED GALLIUM-ARSENIDE GROWN ON (001) SILICON SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1987, 51 (01) : 18 - 20

[7] PATTERNED GROWTH OF GALLIUM-ARSENIDE ON SILICON [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (02): : 699 - 702

[8] Shichijo H., 1987, 1987 International Electron Devices Meeting, IEDM. Technical Digeset (Cat. No.87CH2515-5), P88, DOI 10.1109/IEDM.1987.191356

[9] SHICHIJO H, 1987, MRS S P, V91, P201

[10] WILLIAMS JS, 1979, ELECTROCHEMICAL SOC, P914

[1] PROCESSING AND CHARACTERIZATION OF GAAS GROWN INTO RECESSED SILICON [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (02): : 717 - 719

[2] EFFECT OF INSITU AND EXSITU ANNEALING ON DISLOCATIONS IN GAAS ON SI SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1987, 50 (15) : 992 - 994

[3] MOLECULAR-BEAM EPITAXY AND OPTICAL CHARACTERIZATION OF GAAS ON CAF2 SUBSTRATES [J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (01) : 208 - 212

[4] RAMAN CHARACTERIZATION OF TWINNING IN HETEROEPITAXIAL SEMICONDUCTOR LAYERS - GAAS/(CA,SR)F2 [J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (03) : 1025 - 1031

[5] DEFECT REDUCTION BY THERMAL ANNEALING OF GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY ON SI SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1987, 50 (01) : 31 - 33

[6] MICROSTRUCTURAL CHARACTERIZATION OF PATTERNED GALLIUM-ARSENIDE GROWN ON (001) SILICON SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1987, 51 (01) : 18 - 20

[7] PATTERNED GROWTH OF GALLIUM-ARSENIDE ON SILICON [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (02): : 699 - 702

[8] Shichijo H., 1987, 1987 International Electron Devices Meeting, IEDM. Technical Digeset (Cat. No.87CH2515-5), P88, DOI 10.1109/IEDM.1987.191356

[9] SHICHIJO H, 1987, MRS S P, V91, P201

[10] WILLIAMS JS, 1979, ELECTROCHEMICAL SOC, P914