PATTERNED GROWTH OF GALLIUM-ARSENIDE ON SILICON

[1] EFFECT OF INSITU AND EXSITU ANNEALING ON DISLOCATIONS IN GAAS ON SI SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1987, 50 (15) : 992 - 994

[2] MONOLITHIC INTEGRATION OF SI MOSFETS AND GAAS-MESFETS [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (04) : 241 - 243

[3] CHOI HK, 1986, MAT RES SOC S P, V67, P165

[4] KAJIKAWA Y, 1986, 18TH INT C SOL STAT, P125

[5] DEFECT REDUCTION BY THERMAL ANNEALING OF GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY ON SI SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1987, 50 (01) : 31 - 33

[6] LEE JW, 1986, MATERIALS RES SOC S, V67, P29

[7] MICROSTRUCTURAL CHARACTERIZATION OF PATTERNED GALLIUM-ARSENIDE GROWN ON (001) SILICON SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1987, 51 (01) : 18 - 20

[8] GROWTH AND PATTERNING OF GAAS/GE SINGLE-CRYSTAL LAYERS ON SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1984, 45 (03) : 274 - 276

[9] LOW-DISLOCATION-DENSITY GAAS EPILAYERS GROWN ON GE-COATED SI SUBSTRATES BY MEANS OF LATERAL EPITAXIAL OVERGROWTH [J]. APPLIED PHYSICS LETTERS, 1982, 41 (04) : 347 - 349

[10] EFFECTS OF THE SUBSTRATE OFFSET ANGLE ON THE GROWTH OF GAAS ON SI SUBSTRATE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (09): : L789 - L791

[1] EFFECT OF INSITU AND EXSITU ANNEALING ON DISLOCATIONS IN GAAS ON SI SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1987, 50 (15) : 992 - 994

[2] MONOLITHIC INTEGRATION OF SI MOSFETS AND GAAS-MESFETS [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (04) : 241 - 243

[3] CHOI HK, 1986, MAT RES SOC S P, V67, P165

[4] KAJIKAWA Y, 1986, 18TH INT C SOL STAT, P125

[5] DEFECT REDUCTION BY THERMAL ANNEALING OF GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY ON SI SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1987, 50 (01) : 31 - 33

[6] LEE JW, 1986, MATERIALS RES SOC S, V67, P29

[7] MICROSTRUCTURAL CHARACTERIZATION OF PATTERNED GALLIUM-ARSENIDE GROWN ON (001) SILICON SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1987, 51 (01) : 18 - 20

[8] GROWTH AND PATTERNING OF GAAS/GE SINGLE-CRYSTAL LAYERS ON SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1984, 45 (03) : 274 - 276

[9] LOW-DISLOCATION-DENSITY GAAS EPILAYERS GROWN ON GE-COATED SI SUBSTRATES BY MEANS OF LATERAL EPITAXIAL OVERGROWTH [J]. APPLIED PHYSICS LETTERS, 1982, 41 (04) : 347 - 349

[10] EFFECTS OF THE SUBSTRATE OFFSET ANGLE ON THE GROWTH OF GAAS ON SI SUBSTRATE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (09): : L789 - L791