MICROSTRUCTURAL CHARACTERIZATION OF PATTERNED GALLIUM-ARSENIDE GROWN ON (001) SILICON SUBSTRATES

被引：23

作者：

MATYI, RJ

SHICHIJO, H

MOORE, TM

TSAI, HL

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 01期

关键词：

D O I：

10.1063/1.98890

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：18 / 20

页数：3

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