ASPECTS OF GAAS SELECTIVE AREA GROWTH BY MOLECULAR-BEAM EPITAXY WITH PATTERNING BY SIO2 MASKING

被引：13

作者：

LI, AZ ^{[1
]}

CHENG, H ^{[1
]}

MILNES, AG ^{[1
]}

机构：

[1] CARNEGIE MELLON INST, PITTSBURGH, PA 15213 USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1983年 / 130卷 / 10期

关键词：

D O I：

10.1149/1.2119525

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2072 / 2075

页数：4

共 29 条

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