SELECTIVE EPITAXIAL-GROWTH OF GAAS FROM LIQUID-PHASE

被引：6

作者：

ISHIHARA, O ^{[1
]}

OTSUBO, M ^{[1
]}

MITSUI, S ^{[1
]}

机构：

[1] MITSUBISHI ELECT CORP, CENT RES LAB, ITAMI, HYOGO, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1977年 / 16卷 / 12期

关键词：

D O I：

10.1143/JJAP.16.2109

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2109 / 2113

页数：5

共 12 条

[1] GAAS PLANAR TECHNOLOGY BY MOLECULAR-BEAM EPITAXY (MBE) [J].

CHO, AY ;

BALLAMY, WC .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (02) :783-785

[2] POWER GAAS MESFET WITH A HIGH DRAIN-SOURCE BREAKDOWN VOLTAGE [J].

FUKUTA, M ;

SUYAMA, K ;

SUZUKI, H ;

NAKAYAMA, Y ;

ISHIKAWA, H .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1976, 24 (06) :312-317

[3] ANISOTROPY IN ETCHING AND DEPOSITION OF SELECTIVE EPITAXIAL GROWTH OF GAAS [J].

ISIBASHI, Y ;

YAMAGUCHI, M .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1970, 9 (08) :1007-+

[4] SELECTIVE ETCHING OF GALLIUM ARSENIDE CRYSTALS IN H2SO4-H2O2-H2O SYSTEM [J].

LIDA, S .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (05) :768-&

[5] GROWTH OF UNIFORM SUBMICRON GAAS LAYERS BY LIQUID-PHASE EPITAXY [J].

MORKOC, H ;

EASTMAN, LF .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (06) :906-912

[6] PREFERENTIAL ETCHING OF GAAS THROUGH PHOTORESIST MASKS [J].

OTSUBO, M ;

ODA, T ;

KUMABE, H ;

MIKI, H .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (05) :676-680

[7] LIQUID-PHASE EPITAXIAL-GROWTH OF GAAS FROM AU-GE-NI MELTS [J].

OTSUBO, M ;

KUMABE, H ;

MIKI, H .

SOLID-STATE ELECTRONICS, 1977, 20 (07) :617-621

[8] SELECTIVE EPITAXIAL-GROWTH OF GAAS FROM LIQUID-PHASE [J].

PISKORSKI, MM ;

STAREEV, GD .

SOLID-STATE ELECTRONICS, 1975, 18 (10) :859-&

[9] CW OSCILLATIONS IN GAAS PLANAR-TYPE BULK DIODES [J].

SEKIDO, K ;

TAKEUCHI, T ;

HASEGAWA, F ;

KIKUCHI, S .

PROCEEDINGS OF THE IEEE, 1969, 57 (05) :815-+

[10] SELECTIVE EPITAXIAL DEPOSITION OF GALLIUM ARSENIDE IN HOLES [J].

SHAW, DW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (09) :904-&

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