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SELECTIVE LIFT-OFF FOR PREFERENTIAL GROWTH WITH MOLECULAR-BEAM EPITAXY
被引:10
作者
:
CHO, AY
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
CHO, AY
[
1
]
DILORENZO, JV
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
DILORENZO, JV
[
1
]
MAHONEY, GE
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
MAHONEY, GE
[
1
]
机构
:
[1]
BELL TEL LABS INC,MURRAY HILL,NJ 07974
来源
:
IEEE TRANSACTIONS ON ELECTRON DEVICES
|
1977年
/ 24卷
/ 09期
关键词
:
D O I
:
10.1109/T-ED.1977.18904
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:1186 / 1187
页数:2
相关论文
共 4 条
[1]
PLANAR ISOLATED GAAS DEVICES PRODUCED BY MOLECULAR-BEAM EPITAXY
[J].
BALLAMY, WC
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,READING,PA 19604
BALLAMY, WC
;
CHO, AY
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,READING,PA 19604
CHO, AY
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1976,
23
(04)
:481
-484
[2]
GAAS PLANAR TECHNOLOGY BY MOLECULAR-BEAM EPITAXY (MBE)
[J].
CHO, AY
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
CHO, AY
;
BALLAMY, WC
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BALLAMY, WC
.
JOURNAL OF APPLIED PHYSICS,
1975,
46
(02)
:783
-785
[3]
CHO AY, 1975, PROGR SOLID STATE G, V10
[4]
POWER GAAS MESFET WITH A HIGH DRAIN-SOURCE BREAKDOWN VOLTAGE
[J].
FUKUTA, M
论文数:
0
引用数:
0
h-index:
0
机构:
FUJITSU LABS LTD,NAKAHARA KU,KAWASAKI,JAPAN
FUJITSU LABS LTD,NAKAHARA KU,KAWASAKI,JAPAN
FUKUTA, M
;
SUYAMA, K
论文数:
0
引用数:
0
h-index:
0
机构:
FUJITSU LABS LTD,NAKAHARA KU,KAWASAKI,JAPAN
FUJITSU LABS LTD,NAKAHARA KU,KAWASAKI,JAPAN
SUYAMA, K
;
SUZUKI, H
论文数:
0
引用数:
0
h-index:
0
机构:
FUJITSU LABS LTD,NAKAHARA KU,KAWASAKI,JAPAN
FUJITSU LABS LTD,NAKAHARA KU,KAWASAKI,JAPAN
SUZUKI, H
;
NAKAYAMA, Y
论文数:
0
引用数:
0
h-index:
0
机构:
FUJITSU LABS LTD,NAKAHARA KU,KAWASAKI,JAPAN
FUJITSU LABS LTD,NAKAHARA KU,KAWASAKI,JAPAN
NAKAYAMA, Y
;
ISHIKAWA, H
论文数:
0
引用数:
0
h-index:
0
机构:
FUJITSU LABS LTD,NAKAHARA KU,KAWASAKI,JAPAN
FUJITSU LABS LTD,NAKAHARA KU,KAWASAKI,JAPAN
ISHIKAWA, H
.
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES,
1976,
24
(06)
:312
-317
←
1
→
共 4 条
[1]
PLANAR ISOLATED GAAS DEVICES PRODUCED BY MOLECULAR-BEAM EPITAXY
[J].
BALLAMY, WC
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,READING,PA 19604
BALLAMY, WC
;
CHO, AY
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,READING,PA 19604
CHO, AY
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1976,
23
(04)
:481
-484
[2]
GAAS PLANAR TECHNOLOGY BY MOLECULAR-BEAM EPITAXY (MBE)
[J].
CHO, AY
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
CHO, AY
;
BALLAMY, WC
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BALLAMY, WC
.
JOURNAL OF APPLIED PHYSICS,
1975,
46
(02)
:783
-785
[3]
CHO AY, 1975, PROGR SOLID STATE G, V10
[4]
POWER GAAS MESFET WITH A HIGH DRAIN-SOURCE BREAKDOWN VOLTAGE
[J].
FUKUTA, M
论文数:
0
引用数:
0
h-index:
0
机构:
FUJITSU LABS LTD,NAKAHARA KU,KAWASAKI,JAPAN
FUJITSU LABS LTD,NAKAHARA KU,KAWASAKI,JAPAN
FUKUTA, M
;
SUYAMA, K
论文数:
0
引用数:
0
h-index:
0
机构:
FUJITSU LABS LTD,NAKAHARA KU,KAWASAKI,JAPAN
FUJITSU LABS LTD,NAKAHARA KU,KAWASAKI,JAPAN
SUYAMA, K
;
SUZUKI, H
论文数:
0
引用数:
0
h-index:
0
机构:
FUJITSU LABS LTD,NAKAHARA KU,KAWASAKI,JAPAN
FUJITSU LABS LTD,NAKAHARA KU,KAWASAKI,JAPAN
SUZUKI, H
;
NAKAYAMA, Y
论文数:
0
引用数:
0
h-index:
0
机构:
FUJITSU LABS LTD,NAKAHARA KU,KAWASAKI,JAPAN
FUJITSU LABS LTD,NAKAHARA KU,KAWASAKI,JAPAN
NAKAYAMA, Y
;
ISHIKAWA, H
论文数:
0
引用数:
0
h-index:
0
机构:
FUJITSU LABS LTD,NAKAHARA KU,KAWASAKI,JAPAN
FUJITSU LABS LTD,NAKAHARA KU,KAWASAKI,JAPAN
ISHIKAWA, H
.
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES,
1976,
24
(06)
:312
-317
←
1
→