SELECTIVE LIFT-OFF FOR PREFERENTIAL GROWTH WITH MOLECULAR-BEAM EPITAXY

被引：10

作者：

CHO, AY ^{[1
]}

DILORENZO, JV ^{[1
]}

MAHONEY, GE ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

关键词：

D O I：

10.1109/T-ED.1977.18904

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1186 / 1187

页数：2

共 4 条

[1] PLANAR ISOLATED GAAS DEVICES PRODUCED BY MOLECULAR-BEAM EPITAXY [J].

BALLAMY, WC ;

CHO, AY .

[2] GAAS PLANAR TECHNOLOGY BY MOLECULAR-BEAM EPITAXY (MBE) [J].

CHO, AY ;

BALLAMY, WC .

[3]

CHO AY, 1975, PROGR SOLID STATE G, V10

[4] POWER GAAS MESFET WITH A HIGH DRAIN-SOURCE BREAKDOWN VOLTAGE [J].

FUKUTA, M ;

SUYAMA, K ;

SUZUKI, H ;

NAKAYAMA, Y ;

ISHIKAWA, H .