SELECTIVE LIFT-OFF FOR PREFERENTIAL GROWTH WITH MOLECULAR-BEAM EPITAXY

被引:10
作者
CHO, AY [1 ]
DILORENZO, JV [1 ]
MAHONEY, GE [1 ]
机构
[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974
关键词
D O I
10.1109/T-ED.1977.18904
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1186 / 1187
页数:2
相关论文
共 4 条
[1]   PLANAR ISOLATED GAAS DEVICES PRODUCED BY MOLECULAR-BEAM EPITAXY [J].
BALLAMY, WC ;
CHO, AY .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (04) :481-484
[2]   GAAS PLANAR TECHNOLOGY BY MOLECULAR-BEAM EPITAXY (MBE) [J].
CHO, AY ;
BALLAMY, WC .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (02) :783-785
[3]  
CHO AY, 1975, PROGR SOLID STATE G, V10
[4]   POWER GAAS MESFET WITH A HIGH DRAIN-SOURCE BREAKDOWN VOLTAGE [J].
FUKUTA, M ;
SUYAMA, K ;
SUZUKI, H ;
NAKAYAMA, Y ;
ISHIKAWA, H .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1976, 24 (06) :312-317