PROCESSING AND CHARACTERIZATION OF GAAS GROWN INTO RECESSED SILICON

被引：8

作者：

ADKISSON, JW ^{[1
]}

KAMINS, TI ^{[1
]}

KOCH, SM ^{[1
]}

HARRIS, JS ^{[1
]}

ROSNER, SJ ^{[1
]}

REID, GA ^{[1
]}

NAUKA, K ^{[1
]}

机构：

[1] HEWLETT PACKARD,PALO ALTO,CA 94303

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 02期

关键词：

D O I：

10.1116/1.584354

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：717 / 719

页数：3

共 13 条

[1] SIGNIFICANT IMPROVEMENT IN CRYSTALLINE QUALITY OF MOLECULAR-BEAM EPITAXIALLY GROWN GAAS ON SI (100) BY RAPID THERMAL ANNEALING [J].

CHAND, N ;

PEOPLE, R ;

BAIOCCHI, FA ;

WECHT, KW ;

CHO, AY .

APPLIED PHYSICS LETTERS, 1986, 49 (13) :815-817

[2] EFFECT OF INSITU AND EXSITU ANNEALING ON DISLOCATIONS IN GAAS ON SI SUBSTRATES [J].

CHOI, C ;

OTSUKA, N ;

MUNNS, G ;

HOUDRE, R ;

MORKOC, H ;

ZHANG, SL ;

LEVI, D ;

KLEIN, MV .

APPLIED PHYSICS LETTERS, 1987, 50 (15) :992-994

[3]

Choi H. K., 1985, International Electron Devices Meeting. Technical Digest (Cat. No. 85CH2252-5), P766

[4] MONOLITHIC INTEGRATION OF GAAS/ALGAAS DOUBLE-HETEROSTRUCTURE LEDS AND SI MOSFETS [J].

CHOI, HK ;

TURNER, GW ;

WINDHORN, TH ;

TSAUR, BY .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (09) :500-502

[5] MICROWAVE PROPERTIES OF SELF-ALIGNED GAAS/ALGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS ON SILICON SUBSTRATES [J].

FISCHER, R ;

KLEM, J ;

PENG, CK ;

GEDYMIN, JS ;

MORKOC, H .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (02) :112-114

[6] MATERIAL PROPERTIES OF HIGH-QUALITY GAAS EPITAXIAL LAYERS GROWN ON SI SUBSTRATES [J].

FISCHER, R ;

MORKOC, H ;

NEUMANN, DA ;

ZABEL, H ;

CHOI, C ;

OTSUKA, N ;

LONGERBONE, M ;

ERICKSON, LP .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (05) :1640-1647

[7] MONOLITHIC INTEGRATION OF GAAS LIGHT-EMITTING-DIODES AND SI METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS [J].

GHOSH, RN ;

GRIFFING, B ;

BALLANTYNE, JM .

APPLIED PHYSICS LETTERS, 1986, 48 (05) :370-371

[8]

HARRIS JS, 1987, HETEROEPITAXY SILICO, V2, P3

[9] LOW-TEMPERATURE SURFACE CLEANING OF SILICON AND ITS APPLICATION TO SILICON MBE [J].

ISHIZAKA, A ;

SHIRAKI, Y .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (04) :666-671

[10] DEFECT REDUCTION BY THERMAL ANNEALING OF GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY ON SI SUBSTRATES [J].

LEE, JW ;

SHICHIJO, H ;

TSAI, HL ;

MATYI, RJ .

APPLIED PHYSICS LETTERS, 1987, 50 (01) :31-33

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