RAMAN CHARACTERIZATION OF TWINNING IN HETEROEPITAXIAL SEMICONDUCTOR LAYERS - GAAS/(CA,SR)F2

被引：24

作者：

LANDA, G ^{[1
]}

CARLES, R ^{[1
]}

RENUCCI, JB ^{[1
]}

FONTAINE, C ^{[1
]}

BEDEL, E ^{[1
]}

MUNOZYAGUE, A ^{[1
]}

机构：

[1] CNRS,AUTOMAT & ANALYSE SYST LAB 8001,F-31055 TOULOUSE,FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 03期

关键词：

D O I：

10.1063/1.337392

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1025 / 1031

页数：7

共 19 条

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[9] INFRARED DISPERSION OF SECOND-ORDER ELECTRIC SUSCEPTIBILITIES IN SEMICONDUCTING COMPOUNDS [J].

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[10]

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