DEFECTS IN LOW-TEMPERATURE-GROWN GAAS ANNEALED AT 800-DEGREES-C

被引：25

作者：

OHBU, I

TAKAHAMA, M

HIRUMA, K

机构：

[1] Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo 185

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 14期

关键词：

D O I：

10.1063/1.108449

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

GaAs grown by molecular beam epitaxy (MBE) at 300-degrees-C is annealed at 800-degrees-C and optical properties are studied using photoluminescence spectroscopy (PL) and infrared-absorption spectroscopy. Three kinds of defects are observed. One of them is attributed to gallium vacancies with an energy level at 0.3 eV above the valence-band edge. The concentration of gallium vacancies is increased by the high-temperature annealing. The GaAs can render inactive free electrons of 1.3 X 10(18) CM-3 even after annealing at 800-degrees-C for 10 min.

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页码：1679 / 1681

页数：3

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