A METASTABLE ALPHA-PARTICLE IRRADIATION-INDUCED DEFECT IN N-GAAS

被引：6

作者：

AURET, FD

ERASMUS, RM

GOODMAN, SA

机构：

[1] Physics Department, University of Pretoria, Pretoria

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1994年 / 33卷 / 4A期

关键词：

GAAS; RADIATION INDUCED DEFECTS; METASTABLE DEFECTS; DEEP LEVEL TRANSIENT SPECTROSCOPY (DLTS);

D O I：

10.1143/JJAP.33.L491

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the introduction and characterization of a metastable alpha-particle irradiation induced defect, Ealpha8, in n-GaAs by deep level transient spectroscopy (DLTS) using Schottky barrier diodes. The Ealpha8 defect, with an energy level 0.18 eV below the conduction band, as determined by low-field DLTS measurements, could be reversibly transformed (removed and re-introduced) by employing zero and reverse bias anneals, respectively, in the 100-140 K temperature range. The transformation kinetics of Ealpha8 displayed first order behaviour and was found to be charge state dependant.

引用

页码：L491 / L493

页数：3

共 13 条

[1] ELECTRICAL CHARACTERIZATION OF DEFECTS INTRODUCED IN N-GAAS BY ALPHA-IRRADIATION AND BETA-IRRADIATION FROM RADIONUCLIDES [J].