NEGATIVELY CHARGED HYDROGEN SPECIES IN N-TYPE GAAS

被引：35

作者：

LEITCH, AWR ^{[1
]}

PRESCHA, T ^{[1
]}

WEBER, J ^{[1
]}

机构：

[1] UNIV PORT ELIZABETH,DEPT PHYS,PORT ELIZABETH 6000,SOUTH AFRICA

来源：

PHYSICAL REVIEW B | 1991年 / 44卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.44.1375

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Se donors in doped n-type Ga.As are passivated by exposure to a hydrogen plasma. The thermal reactivation of the passivated donors is investigated for the temperature range 154-degrees-C-191-degrees-C. By using the electric field of a reverse-biased Schottky-diode structure, the drift of the thermally dissociated hydrogen as a negatively charged species is demonstrated. The thermal dissociation of the SeH complex obeys first-order kinetics, with a dissociation energy E(SeH) = 1.52 +/- 0.05 eV.

引用

页码：1375 / 1378

页数：4

共 17 条

[1] ABINITIO CALCULATIONS ON THE PASSIVATION OF SHALLOW IMPURITIES IN GAAS [J].

BRIDDON, PR ;

JONES, R .

PHYSICAL REVIEW LETTERS, 1990, 64 (21) :2535-2538

[2] HYDROGEN SOLUBILITY IN N-TYPE SILICON DOPED GAAS AND ITS EFFECTS ON THE MATERIAL ELECTRONIC QUALITY [J].

CAGLIO, N ;

CONSTANT, E ;

PESANT, JC ;

CHEVALLIER, J .

JOURNAL OF APPLIED PHYSICS, 1991, 69 (03) :1345-1349

[3]

CHEVALLIER J, IN PRESS SEMICONDUCT, V34

[4] ELECTRONIC LEVEL OF INTERSTITIAL HYDROGEN IN GAAS [J].

CLERJAUD, B ;

GENDRON, F ;

KRAUSE, M ;

ULRICI, W .

PHYSICAL REVIEW LETTERS, 1990, 65 (14) :1800-1803

[5] HYDROGEN IN CRYSTALLINE SEMICONDUCTORS [J].

HALLER, EE .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1991, 6 (02) :73-84

[6] HYDROGEN PASSIVATION OF SHALLOW-ACCEPTOR IMPURITIES IN PARA-TYPE GAAS [J].

JOHNSON, NM ;

BURNHAM, RD ;

STREET, RA ;

THORNTON, RL .

PHYSICAL REVIEW B, 1986, 33 (02) :1102-1105

[7]

LEITCH AWR, IN PRESS APPL SURF S

[8] DEPTH DEPENDENCE OF SILICON DONOR PASSIVATION AND REACTIVATION IN HYDROGENATED GAAS [J].

MCCLUSKEY, FP ;

PFEIFFER, L ;

WEST, KW ;

LOPATA, J ;

SCHNOES, ML ;

HARRIS, TD ;

PEARTON, SJ ;

DAUTREMONTSMITH, WC .

APPLIED PHYSICS LETTERS, 1989, 54 (18) :1769-1771

[9]

PAJOT B, 1989, I PHYS C SER, V95, P437

[10] AMPHOTERIC BEHAVIOR OF H0 IN GAAS [J].

PAVESI, L ;

GIANNOZZI, P ;

REINHART, FK .

PHYSICAL REVIEW B, 1990, 42 (03) :1864-1867

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