DEPTH DEPENDENCE OF SILICON DONOR PASSIVATION AND REACTIVATION IN HYDROGENATED GAAS

被引：23

作者：

MCCLUSKEY, FP ^{[1
]}

PFEIFFER, L ^{[1
]}

WEST, KW ^{[1
]}

LOPATA, J ^{[1
]}

SCHNOES, ML ^{[1
]}

HARRIS, TD ^{[1
]}

PEARTON, SJ ^{[1
]}

DAUTREMONTSMITH, WC ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 18期

关键词：

D O I：

10.1063/1.101286

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1769 / 1771

页数：3

共 11 条

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[2]

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[5]

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[7] ANALYSIS OF TRANSMISSION ELECTRON-MICROSCOPY IMAGES OF HYDROGEN PLATELETS IN PROTON-BOMBARDED GAAS [J].

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[8] HYDROGENATION OF SHALLOW-DONOR LEVELS IN GAAS [J].

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[9] DOPANT-TYPE EFFECTS ON THE DIFFUSION OF DEUTERIUM IN GAAS [J].

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