SOME MEASUREMENTS OF STRESS IN THIN FILMS PREPARED BY LOW PRESSURE TRIODE SPUTTERING

被引：22

作者：

STUART, PR

机构：

[1] Division of Inorganic and Metallic Structure, National Physical Laboratory, Teddington, Middlesex

来源：

VACUUM | 1969年 / 19卷 / 11期

关键词：

D O I：

10.1016/S0042-207X(69)91859-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A flexible cantilever method has been used to measure stress in films of tantalum, tungsten, molybdenum, chromium, nickel, copper and gold deposited by low pressure sputtering in argon. In all cases the stress was compressive. With tantalum, tungsten and molybdenum stress values of over 100 kgf/mm2 were found under some conditions. A detailed study of the stress in tantalum films indicates the importance of the part played by residual gases. Tantalum oxide films formed by reactive sputtering have been found to have a low tensile stress. © 1969.

引用

页码：507 / +

页数：1

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