IMAGING CHARACTERISTICS OF MULTIPHASE-SHIFTING AND HALF-TONE PHASE-SHIFTING MASKS

被引:82
作者
TERASAWA, T
HASEGAWA, N
FUKUDA, H
KATAGIRI, S
机构
[1] Central Research Laboratory, Hitachi, Ltd, Kokubunji, Tokyo, 185
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 11B期
关键词
PHASE-SHIFTING MASK; RESOLUTION; OPTICAL LITHOGRAPHY; CRITICAL FREQUENCY; FOCUS LATITUDE; HALF-TONE I-LINE; EXCIMER LASER;
D O I
10.1143/JJAP.30.2991
中图分类号
O59 [应用物理学];
学科分类号
摘要
Phase-shifting masks and imaging characteristics are discussed and compared with those of conventional transmission masks. Then, new phase-shifting masks with intermediate values of phase shifting or transmittance are proposed, and their imaging characteristics are investigated. A phase-shifting mask with a 90-degrees phase difference can ease the restrictions on pattern geometries used in phase-shifting technology but does not increase the focus latitude. It is also suggested that a halftone phase-shifting mask is suitable for printing isolated patterns and it gives wider focus latitude than conventional mask technology.
引用
收藏
页码:2991 / 2997
页数:7
相关论文
共 14 条
[1]  
Fukuda H., 1990, Proceedings of the SPIE - The International Society for Optical Engineering, V1264, P14, DOI 10.1117/12.20176
[2]  
GOODMAN JW, 1968, INTRO FOURIER OPTICS, P128
[3]  
HANYU I, 1990, 1990 SPIES S MICR P, V1264, P167
[4]   SUBHALF-MICRON PATTERNING OF NEGATIVE WORKING RESIST BY USING NEW PHASE-SHIFTING MASKS [J].
JINBO, H ;
YAMASHITA, Y ;
SADAMURA, M .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (06) :1745-1748
[5]  
JINBO H, 1990, 1990 IEEE INT EL DEV, P825
[6]   IMPROVING RESOLUTION IN PHOTOLITHOGRAPHY WITH A PHASE-SHIFTING MASK [J].
LEVENSON, MD ;
VISWANATHAN, NS ;
SIMPSON, RA .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (12) :1828-1836
[7]   THE PHASE-SHIFTING MASK .2. IMAGING SIMULATIONS AND SUBMICROMETER RESIST EXPOSURES [J].
LEVENSON, MD ;
GOODMAN, DS ;
LINDSEY, S ;
BAYER, PW ;
SANTINI, HAE .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (06) :753-763
[8]  
NAKAGAWA K, 1990, 1990 INT EL DEV M TE, P817
[9]  
NITAYAMA A, 1989, 1989 INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST, P57
[10]  
Pfau A. K., 1991, 1991 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.91CH3017-1), P93, DOI 10.1109/VLSIT.1991.706006