ELECTRON-MOBILITY IN COMPENSATED GAAS AND ALXGA1-XAS

被引：12

作者：

STRINGFELLOW, GB ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 80,FED REP GER

来源：

APPLIED PHYSICS LETTERS | 1980年 / 36卷 / 07期

关键词：

D O I：

10.1063/1.91572

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：540 / 542

页数：3

共 22 条

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[9] PECULIARITIES IN PHOTOELECTRICAL PROPERTIES OF CDS SINGLE-CRYSTALS IRRADIATED WITH FAST-PILE NEUTRONS [J].

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