A DETAILED INVESTIGATION OF HETEROJUNCTION TRANSPORT USING A RIGOROUS SOLUTION TO THE BOLTZMANN-EQUATION

被引：22

作者：

STETTLER, MA ^{[1
]}

LUNDSTROM, MS ^{[1
]}

机构：

[1] PURDUE UNIV,SCH ELECT ENGN,OPTOELECTR RES CTR,W LAFAYETTE,IN 47907

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1994年 / 41卷 / 04期

关键词：

D O I：

10.1109/16.278515

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A detailed study of electron transport across an Np+ heterojunction diode is performed using a rigorous numerical solution to the Boltzmann equation. Results are presented for the I-V characteristic and the average electron energy, temperature, energy flux, and quasi-Fermi levels as a function of position. Comparison with a simple analytical treatment shows good agreement for the current and quasi-Fermi level splitting versus bias. The distribution functions near the heterojunction interface are also investigated and found to be distinctly non-Maxwellian. Finally, the results are used to examine the boundary conditions of hydrodynamic quantities at the heterojunction.

引用

页码：592 / 600

页数：9

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