DIRECT OBSERVATION OF GROWTH FRONT MOVEMENT IN ELECTRON-BEAM RECRYSTALLIZATION OF SILICON LAYER ON INSULATOR

被引：3

作者：

INOUE, T

HAMASAKI, T

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 15期

关键词：

D O I：

10.1063/1.98002

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：971 / 973

页数：3

共 12 条

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[3] HIGHLY CONTROLLABLE PSEUDOLINE ELECTRON-BEAM RECRYSTALLIZATION OF SILICON ON INSULATOR [J].

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TANGO, H .

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[4]

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[5]

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[7]

ISHIWARA H, 1983, 15TH C SOL STAT DEV, P97

[8] SILICON-ON-INSULATOR STRUCTURES FORMED BY A LINE-SOURCE ELECTRON-BEAM - EXPERIMENT AND THEORY [J].

KNAPP, JA .

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[10]

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