LATERALLY SEEDED REGROWTH OF SILICON OVER SIO2 THROUGH STRIP ELECTRON-BEAM IRRADIATION

被引：21

作者：

HAYAFUJI, Y ^{[1
]}

YANADA, T ^{[1
]}

USUI, S ^{[1
]}

KAWADO, S ^{[1
]}

SHIBATA, A ^{[1
]}

WATANABE, N ^{[1
]}

KIKUCHI, M ^{[1
]}

WILLIAMS, KE ^{[1
]}

机构：

[1] ENERGY SCI INC, WOBURN, MA 01801 USA

来源：

APPLIED PHYSICS LETTERS | 1983年 / 43卷 / 05期

关键词：

D O I：

10.1063/1.94393

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：473 / 475

页数：3

共 22 条

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APPLIED PHYSICS LETTERS, 1979, 35 (01) :71-74

[8]

HAYAFUJI Y, 1983, 163RD EL SOC M SAN F

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