HIGHLY CONTROLLABLE PSEUDOLINE ELECTRON-BEAM RECRYSTALLIZATION OF SILICON ON INSULATOR

被引：12

作者：

HAMASAKI, T

INOUE, T

HIGASHINAKAGAWA, I

YOSHII, T

TANGO, H

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 59卷 / 08期

关键词：

D O I：

10.1063/1.336911

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2971 / 2976

页数：6

共 18 条

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