RECRYSTALLIZATION OF SILICON-ON-INSULATOR STRUCTURES BY SINUSOIDALLY-SCANNED ELECTRON-BEAMS

被引:24
作者
ISHIWARA, H
OHYU, K
HORITA, S
FURUKAWA, S
机构
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1985年 / 24卷 / 02期
关键词
D O I
10.1143/JJAP.24.126
中图分类号
O59 [应用物理学];
学科分类号
摘要
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页码:126 / 132
页数:7
相关论文
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