3-DIMENSIONAL CMOS ICS FABRICATED BY USING BEAM RECRYSTALLIZATION

被引：34

作者：

KAWAMURA, S

SASAKI, N

IWAI, T

NAKANO, M

TAKAGI, M

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1983年 / 4卷 / 10期

关键词：

D O I：

10.1109/EDL.1983.25766

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：366 / 368

页数：3

共 8 条

[1]

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[2]

GEIS MW, 1979, IEDM TECH DIG DEC

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[4]

Goeloe G. T., 1981, International Electron Devices Meeting, P554

[5]

HAYASHI H, 1980, NIKKEI ELECTRON 0218, P82

[6] GRAIN-BOUNDARIES IN P-N-JUNCTION DIODES FABRICATED IN LASER-RECRYSTALLIZED SILICON THIN-FILMS [J].

JOHNSON, NM ;

BIEGELSEN, DK ;

MOYER, MD .

APPLIED PHYSICS LETTERS, 1981, 38 (11) :900-902

[7] A CMOS STRUCTURE USING BEAM-RECRYSTALLIZED POLYSILICON [J].

KAMINS, TI .

ELECTRON DEVICE LETTERS, 1982, 3 (11) :341-343

[8] LASER-INDUCED LATERAL EPITAXIAL-GROWTH OF SILICON OVER SILICON DIOXIDE WITH LOCALLY VARIED ENCAPSULATION [J].

SAKURAI, J ;

KAWAMURA, S ;

NAKANO, M ;

TAKAGI, M .

APPLIED PHYSICS LETTERS, 1982, 41 (01) :64-67

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