A CMOS STRUCTURE USING BEAM-RECRYSTALLIZED POLYSILICON

被引：17

作者：

KAMINS, TI

机构：

来源：

ELECTRON DEVICE LETTERS | 1982年 / 3卷 / 11期

关键词：

D O I：

10.1109/EDL.1982.25594

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：341 / 343

页数：3

共 7 条

[1]

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ELECTRON DEVICE LETTERS, 1982, 3 (06) :161-163

[6] THIN-FILM MOSFETS FABRICATED IN LASER-ANNEALED POLYCRYSTALLINE SILICON [J].

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[7] N-CHANNEL DEEP-DEPLETION METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS FABRICATED IN ZONE-MELTING-RECRYSTALLIZED POLYCRYSTALLINE SI FILMS ON SIO2 [J].

TSAUR, BY ;

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APPLIED PHYSICS LETTERS, 1981, 39 (11) :909-911

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