FORMATION OF A HEXAGONAL SILICON PHASE AFTER PULSED LASER EXCITATION

被引：7

作者：

MARFAING, J

MARINE, W

机构：

来源：

PHILOSOPHICAL MAGAZINE LETTERS | 1989年 / 59卷 / 02期

关键词：

D O I：

10.1080/09500838908214781

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

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页码：87 / 94

页数：8

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共 15 条

[11]

PARSONS JR, 1984, PHILOS MAG A, V50, P329, DOI 10.1080/01418618408244231

[12] SUPERCOOLING AND NUCLEATION OF SILICON AFTER LASER MELTING [J].

STIFFLER, SR ;

THOMPSON, MO ;

PEERCY, PS .

PHYSICAL REVIEW LETTERS, 1988, 60 (24) :2519-2522

[13] CRYSTALLIZATION INSTABILITY AT THE AMORPHOUS-SILICON LIQUID-SILICON INTERFACE [J].

TSAO, JY ;

PEERCY, PS .

PHYSICAL REVIEW LETTERS, 1987, 58 (26) :2782-2785

[14] LASER-ENHANCED CRYSTALLIZATION OF GE AND SI [J].

WAUTELET, M ;

ANDREW, R ;

LAUDE, LD .

JOURNAL OF CRYSTAL GROWTH, 1983, 65 (1-3) :231-234

[15] THEORETICAL-ANALYSIS OF EXPLOSIVELY PROPAGATING MOLTEN LAYERS IN PULSED-LASER-IRRADIATED A-SI [J].

WOOD, RF ;

GEIST, GA .

PHYSICAL REVIEW LETTERS, 1986, 57 (07) :873-876