LASER-ENHANCED CRYSTALLIZATION OF GE AND SI

被引：5

作者：

WAUTELET, M

ANDREW, R

LAUDE, LD

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1983年 / 65卷 / 1-3期

关键词：

D O I：

10.1016/0022-0248(83)90053-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：231 / 234

页数：4

共 22 条

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ANDREW, R ;

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WAUTELET, M .

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[5]

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[6]

FAILLYLOVATO M, 1982, THESIS U MONS

[7] IONIZATION ENHANCED CRYSTALLIZATION IN AMORPHOUS-GERMANIUM [J].

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[8]

GERMAIN P, 1979, J APPL PHYS, V50, P6995

[9]

JACKSON KA, 1979, CRYSTAL GROWTH TUTOR, P139

[10] CRYSTALLIZATION OF AMORPHOUS SILICON FILMS [J].

KOSTER, U .

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