USE OF SPACE-CHARGE APPROXIMATION AS TRIAL SOLUTION IN COMPUTATION OF POTENTIAL DISTRIBUTIONS IN SEMICONDUCTOR DEVICES

被引：3

作者：

VANOVERSTRAETEN, R

NUYTS, W

机构：

[1] Laboratorium Fysica en Elektronica van de Halfgeleiders Instituut voor Elektrotechniek Kardinaal Mercierlaan, 94, Heverlee

来源：

ELECTRONICS LETTERS | 1969年 / 5卷 / 25期

关键词：

D O I：

10.1049/el:19690482

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

It is shown that the use of the space-charge approximation as a trial solution in the computation of potential distributions in semiconductor devices leads to considerable gains in computer time. © 1969, The Institution of Electrical Engineers. All rights reserved.

引用

页码：646 / +

页数：1

共 5 条

[1] AN ACCURATE NUMERICAL STEADY-STATE 1-DIMENSIONAL SOLUTION OF P-N JUNCTION [J].

DEMARI, A .

SOLID-STATE ELECTRONICS, 1968, 11 (01) :33-+

[2] SELF-CONSISTENT ITERATIVE SCHEME FOR 1-DIMENSIONAL STEADY STATE TRANSISTOR CALCULATIONS [J].

GUMMEL, HK .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (10) :455-&

[3]

KRISTIANSEN GK, 1963, NORD TIDSKR INF BEHA, V3, P205

[4] NUMERICAL CALCULATIONS OF CAPACITANCE OF LINEARLY GRADED SI P-N JUNCTIONS [J].

NUYTS, W ;

VANOVERS.RJ .

ELECTRONICS LETTERS, 1969, 5 (03) :54-&

[5]

ZURMUHL R, 1963, PRAKTISCHE MATHEMATI

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