STUDIES OF METAL-INDUCED SURFACE-DEFECTS IN CZOCHRALSKI SI FOLLOWING RAPID THERMAL-PROCESSING WITH THERMAL WAVE METHOD

被引：1

作者：

HAHN, S

SMITH, WL

SUGA, H

MEINECKE, R

KOLA, RR

ROZGONYI, GA

机构：

[1] THERMA WAVE INC,FREMONT,CA 94539

[2] MITSUBISHI MET CORP LTD,CENT RES INST,OMIYA,SAITAMA 330,JAPAN

[3] AG ASSOCIATES,SUNNYVALE,CA 94089

[4] N CAROLINA STATE UNIV,DEPT MAT SCI & ENGN,RALEIGH,NC 27695

来源：

JOURNAL OF CRYSTAL GROWTH | 1990年 / 103卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(90)90191-M

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Using thermal were mapping and imaging techniques in conjunction with X-ray transmission topography and transmission electron microscopy, precipitation behavior of various fast and slowly diffusing metallic impurities such as Cu, Ni, Al, Zn, Fe, Mo and W in Czochralski Si following rapid thermal processing are investigated. Our data have shown that thermal wave signal is quite sensitive to certain types of metal-induced surface defects (most likely metal silicides). In addition, the comparison between thermal wave and X-ray imaging methods shows an interesting species-dependent relationship. © 1990.

引用

页码：206 / 216

页数：11

共 21 条

[1]

AUGUSTUS PD, 1983, ELECTROCHEM SOC SOFT, P414

[2] PRECIPITATION OF COPPER IN SILICON [J].