BALLISTIC-ELECTRON-EMISSION MICROSCOPY AND SPECTROSCOPY OF GAP(110)-METAL INTERFACES

被引：105

作者：

PRIETSCH, M ^{[1
]}

LUDEKE, R ^{[1
]}

机构：

[1] FREE UNIV BERLIN, INST EXPTL PHYS, W-1000 BERLIN 33, GERMANY

来源：

PHYSICAL REVIEW LETTERS | 1991年 / 66卷 / 19期

关键词：

D O I：

10.1103/PhysRevLett.66.2511

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Ballistic-electron-emission-microscopy (BEEM) studies of Mg, Ni, Cu, Ag, and Au films on cleaved n-type GaP(110) show uniform Schottky-barrier heights across the surfaces, which varied from 1.02 eV for Mg to 1.41 eV for Au. BEEM images reveal areas of sharp current variations (contrast) that coincide with topographic gradients on the metal surfaces. Deduced Schottky-barrier heights depend on the transport model; a 5/2 power-law dependence of the BEEM current on applied voltage results if nonclassical transmission across the interface is included.

引用

页码：2511 / 2514

页数：4

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