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CONTROLLED GROWTH OF 3C-SIC AND 6H-SIC FILMS ON LOW-TILT-ANGLE VICINAL (0001) 6H-SIC WAFERS

被引：135
作者：
POWELL, JA
PETIT, JB
EDGAR, JH
JENKINS, IG
MATUS, LG
YANG, JW
PIROUZ, P
CHOYKE, WJ
CLEMEN, L
YOGANATHAN, M
机构：
[1] CASE WESTERN RESERVE UNIV,DEPT MAT SCI & ENGN,CLEVELAND,OH 44106
[2] UNIV PITTSBURGH,DEPT PHYS & ASTRON,PITTSBURGH,PA 15260
来源：
APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 03期
关键词：
D O I：
10.1063/1.105587
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have found that, with proper pregrowth surface treatment, 6H-SiC single-crystal films can be grown by chemical vapor deposition (CVD) at 1450-degrees-C on vicinal (0001) 6H-SiC with tilt angles as small as 0.1-degrees. Previously, tilt angles of greater than 1.5-degrees were required to achieve 6H on 6H at this growth temperature. In addition, 3C-SiC could be induced to grow within selected regions on the 6H substrate. The 3C regions contained few (or zero) double-positioning boundaries and a low density of stacking faults. A new growth model is proposed to explain the control of SiC polytype in this epitaxial film growth process.
引用
收藏
页码：333 / 335
页数：3
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