CONTACTLESS MEASUREMENT OF SILICON RESISTIVITY IN CYLINDRICAL TE01N MODE CAVITIES

被引：6

作者：

DMOWSKI, S

KRUPKA, J

MILEWSKI, A

机构：

来源：

IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT | 1980年 / 29卷 / 01期

关键词：

D O I：

10.1109/TIM.1980.4314864

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：67 / 70

页数：4

共 10 条

[1] EFFECT OF DEGENERATE E11NU MODE IN H01NU MODE CAVITY ON MEASUREMENT OF COMPLEX PERMITTIVITY [J].

ARON, CP .

PROCEEDINGS OF THE INSTITUTION OF ELECTRICAL ENGINEERS-LONDON, 1967, 114 (08) :1030-&

[2]

Champlin K.S., 1961, IRE T MICROWAVE THEO, VMTT-9, P545, DOI 10.1109/TMTT.1961.1125387

[3] ELECTRODELESS DETERMINATION OF SEMICONDUCTOR CONDUCTIVITY FROM TE01 DEGREES-MODE REFLECTIVITY [J].

CHAMPLIN, KS ;

HOLM, JD ;

GLOVER, GH .

JOURNAL OF APPLIED PHYSICS, 1967, 38 (01) :96-+

[4] CAVITY PERTURBATION TECHNIQUES FOR MEASUREMENT OF MICROWAVE CONDUCTIVITY AND DIELECTRIC-CONSTANT OF A BULK SEMICONDUCTOR MATERIAL [J].

ELDUMIATI, II ;

HADDAD, GI .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1972, MT20 (02) :126-+

[5] A RESONANT CAVITY STUDY OF SEMICONDUCTORS [J].

HSIEH, HT ;

GOLDEY, JM ;

BROWN, SC .

JOURNAL OF APPLIED PHYSICS, 1954, 25 (03) :302-307

[6] ELECTRODELESS MEASUREMENT OF SEMICONDUCTOR RESISTIVITY AT MICROWAVE FREQUENCIES [J].

JACOBS, H ;

BRAND, FA ;

BENJAMIN, R ;

MEINDL, JD ;

BENANTI, M .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1961, 49 (05) :928-&

[7] ASSESSMENT OF THE POSSIBILITIES OF APPLYING APPROXIMATE ANALYSIS METHOD TO MEASUREMENT OF COMPLEX PERMITTIVITY IN TE01N CYLINDRICAL CAVITY [J].

KRUPKA, J ;

MILEWSKI, A .

JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1979, 12 (05) :391-396

[8]

Krupka J., 1978, Electron Technology, V11, P11

[9]

MILEWSKI A, 1975, OPTYMALIZATION MEASU

[10]

SIKORSKI S, 1971, ARCH ELEKTROTECH POL, V20, P249

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