NEGATIVE ELECTRON AFFINITY SURFACES ON SILICON USING A RUBIDIUM-OXYGEN DIPOLE LAYER

[1] INTERFACIAL BARRIER EFFECTS IN III-V PHOTOEMITTERS [J]. APPLIED PHYSICS LETTERS, 1971, 19 (12) : 513 - +

[2] 3-5 COMPOUND PHOTOCATHODES - A NEW FAMILY OF PHOTOEMITTERS WITH GREATLY IMPROVED PERFORMANCE [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1970, 58 (11): : 1788 - +

[3] INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL GERMANIUM AND SILICON AT 77-DEGREES-K AND 300-DEGREES-K [J]. PHYSICAL REVIEW, 1955, 99 (04): : 1151 - 1155

[4] ENGSTROM RW, 1967, RCA REV, V28, P419

[5] PHOTOELECTRON SURFACE ESCAPE PROBABILITY OF (GA,IN)AS-CS-O IN 0.9 TO - 1.6 MUM RANGE [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (09) : 3815 - &

[6] Garbe S., 1970, Physica Status Solidi A, V2, P497, DOI 10.1002/pssa.19700020311

[7] GOLDSTEIN B, PRIVATE COMMUNICATIO

[8] GOLDSTEIN B, UNPUBLISHED DATA

[9] GOLDSTEIN B, TO BE PUBLISHED

[10] INVESTIGATIONS OF THE POSSIBILITY OF REDUCING THE THERMIONIC SENSITIVITY OCCURRING IN COMPOSITE PHOTOCATHODES [J]. PHYSICA STATUS SOLIDI, 1964, 6 (03): : 713 - 721

[1] INTERFACIAL BARRIER EFFECTS IN III-V PHOTOEMITTERS [J]. APPLIED PHYSICS LETTERS, 1971, 19 (12) : 513 - +

[2] 3-5 COMPOUND PHOTOCATHODES - A NEW FAMILY OF PHOTOEMITTERS WITH GREATLY IMPROVED PERFORMANCE [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1970, 58 (11): : 1788 - +

[3] INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL GERMANIUM AND SILICON AT 77-DEGREES-K AND 300-DEGREES-K [J]. PHYSICAL REVIEW, 1955, 99 (04): : 1151 - 1155

[4] ENGSTROM RW, 1967, RCA REV, V28, P419

[5] PHOTOELECTRON SURFACE ESCAPE PROBABILITY OF (GA,IN)AS-CS-O IN 0.9 TO - 1.6 MUM RANGE [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (09) : 3815 - &

[6] Garbe S., 1970, Physica Status Solidi A, V2, P497, DOI 10.1002/pssa.19700020311

[7] GOLDSTEIN B, PRIVATE COMMUNICATIO

[8] GOLDSTEIN B, UNPUBLISHED DATA

[9] GOLDSTEIN B, TO BE PUBLISHED

[10] INVESTIGATIONS OF THE POSSIBILITY OF REDUCING THE THERMIONIC SENSITIVITY OCCURRING IN COMPOSITE PHOTOCATHODES [J]. PHYSICA STATUS SOLIDI, 1964, 6 (03): : 713 - 721