ANOMALOUS DIAMAGNETIC EFFECT IN HIGHLY EXCITED SURFACE SUBBANDS

被引：3

作者：

KUNZE, U ^{[1
]}

机构：

[1] TECH UNIV BRUNSWICK,INST PHYS,HOCHMAGNETFELDANLAGE,D-3300 BRUNSWICK,FED REP GER

来源：

SOLID STATE COMMUNICATIONS | 1987年 / 61卷 / 09期

关键词：

SEMICONDUCTING SILICON - Magnetic Properties;

D O I：

10.1016/0038-1098(87)90165-7

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The diamagnetic energy shift of higher electron subbands in Si(001) space charge layers in a parallel magnetic field is found to be considerably lower than theoretically expected from the triangular well model. The results are qualitatively explained by a subband-energy dependent penetration of the subband wave function into the oxide barrier.

引用

页码：543 / 545

页数：3

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