CHALCOGENS IN GERMANIUM

被引:51
作者
GRIMMEISS, HG
MONTELIUS, L
LARSSON, K
机构
来源
PHYSICAL REVIEW B | 1988年 / 37卷 / 12期
关键词
D O I
10.1103/PhysRevB.37.6916
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:6916 / 6928
页数:13
相关论文
共 28 条
[11]   HIGH-RESOLUTION STUDIES OF SULFUR-RELATED AND SELENIUM-RELATED DONOR CENTERS IN SILICON [J].
JANZEN, E ;
STEDMAN, R ;
GROSSMANN, G ;
GRIMMEISS, HG .
PHYSICAL REVIEW B, 1984, 29 (04) :1907-1918
[12]   FANO RESONANCES IN CHALCOGEN-DOPED SILICON [J].
JANZEN, E ;
GROSSMANN, G ;
STEDMAN, R ;
GRIMMEISS, HG .
PHYSICAL REVIEW B, 1985, 31 (12) :8000-8012
[13]   CAPTURE PROCESSES AT DOUBLE DONORS IN SILICON [J].
KLEVERMAN, M ;
GRIMMEISS, HG ;
LITWIN, A ;
JANZEN, E .
PHYSICAL REVIEW B, 1985, 31 (06) :3659-3666
[14]   DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J].
LANG, DV .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3023-3032
[15]   FAST CAPACITANCE TRANSIENT APPARATUS - APPLICATION TO ZNO AND O CENTERS IN GAP PARANORMAL JUNCTIONS [J].
LANG, DV .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3014-3022
[16]  
LARSSON K, IN PRESS J PHYS E
[17]  
LARSSON K, 1987, SCI INSTRUM, V20, P1480
[18]   CAPACITANCE TRANSIENT SPECTROSCOPY [J].
MILLER, GL ;
LANG, DV ;
KIMERLING, LC .
ANNUAL REVIEW OF MATERIALS SCIENCE, 1977, 7 :377-448
[19]   PHONON DISPERSION RELATIONS IN GE AT 80 DEGREES K [J].
NILSSON, G ;
NELIN, G .
PHYSICAL REVIEW B, 1971, 3 (02) :364-&
[20]   ELECTRONIC-STRUCTURE OF IMPURITIES AND OTHER POINT-DEFECTS IN SEMICONDUCTORS [J].
PANTELIDES, ST .
REVIEWS OF MODERN PHYSICS, 1978, 50 (04) :797-858