CAPTURE PROCESSES AT DOUBLE DONORS IN SILICON

被引：30

作者：

KLEVERMAN, M

GRIMMEISS, HG

LITWIN, A

JANZEN, E

机构：

[1] RIFA AB, DIV IC, S-16381 STOCKHOLM, SWEDEN

[2] ASEA RES & INNOVAT, OPT SENSORS, S-72183 VASTERAS, SWEDEN

来源：

PHYSICAL REVIEW B | 1985年 / 31卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.31.3659

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3659 / 3666

页数：8

共 19 条

[1] RADIATIONLESS RECOMBINATION IN PHOSPHORS [J].

BESS, L .

PHYSICAL REVIEW, 1958, 111 (01) :129-132

[2] ENERGY GAP LAW FOR RADIATIONLESS TRANSITIONS IN LARGE MOLECULES [J].

ENGLMAN, R ;

JORTNER, J .

MOLECULAR PHYSICS, 1970, 18 (02) :145-+

[3] EXCITED-STATES AT DEEP CENTERS IN SI-S AND SI-SE [J].

GRIMMEISS, HG ;

SKARSTAM, B .

PHYSICAL REVIEW B, 1981, 23 (04) :1947-1960

[4] TELLURIUM DONORS IN SILICON [J].

GRIMMEISS, HG ;

JANZEN, E ;

ENNEN, H ;

SCHIRMER, O ;

SCHNEIDER, J ;

WORNER, R ;

HOLM, C ;

SIRTL, E ;

WAGNER, P .

PHYSICAL REVIEW B, 1981, 24 (08) :4571-4586

[5] ELECTRONIC-PROPERTIES OF SELENIUM-DOPED SILICON [J].

GRIMMEISS, HG ;

JANZEN, E ;

SKARSTAM, B .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (07) :3740-3745

[6] DEEP SULFUR-RELATED CENTERS IN SILICON [J].

GRIMMEISS, HG ;

JANZEN, E ;

SKARSTAM, B .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (08) :4212-4217

[7] MULTIVALLEY SPIN SPLITTING OF 1S STATES FOR SULFUR, SELENIUM, AND TELLURIUM DONORS IN SILICON [J].

GRIMMEISS, HG ;

JANZEN, E ;

LARSSON, K .

PHYSICAL REVIEW B, 1982, 25 (04) :2627-2632

[8] HIGH-RESOLUTION STUDIES OF SULFUR-RELATED AND SELENIUM-RELATED DONOR CENTERS IN SILICON [J].

JANZEN, E ;

STEDMAN, R ;

GROSSMANN, G ;

GRIMMEISS, HG .

PHYSICAL REVIEW B, 1984, 29 (04) :1907-1918

[9] CASE FOR LARGE AUGER RECOMBINATION CROSS-SECTIONS ASSOCIATED WITH DEEP CENTERS IN SEMICONDUCTORS [J].

JAROS, M .

SOLID STATE COMMUNICATIONS, 1978, 25 (12) :1071-1074

[10]

Jaros M., 1982, DEEP LEVELS SEMICOND, P180

← 1 2 →