EXCITED-STATES AT DEEP CENTERS IN SI-S AND SI-SE

被引：53

作者：

GRIMMEISS, HG

SKARSTAM, B

机构：

来源：

PHYSICAL REVIEW B | 1981年 / 23卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.23.1947

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1947 / 1960

页数：14

共 35 条

[1]

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[2]

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[4]

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[6]

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[9] DEEP LEVEL IMPURITIES IN SEMICONDUCTORS [J].

GRIMMEISS, HG .

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[10] ELECTRONIC-PROPERTIES OF SELENIUM-DOPED SILICON [J].

GRIMMEISS, HG ;

JANZEN, E ;

SKARSTAM, B .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (07) :3740-3745

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