LUMINESCENCE AND TRANSIENT ABSORPTION-BANDS IN FUSED SIO2 INDUCED BY KRF LASER-RADIATION AT VARIOUS TEMPERATURES

被引：25

作者：

LECLERC, N ^{[1
]}

PFLEIDERER, C ^{[1
]}

HITZLER, H ^{[1
]}

WOLFRUM, J ^{[1
]}

GREULICH, KO ^{[1
]}

THOMAS, S ^{[1
]}

ENGLISCH, W ^{[1
]}

机构：

[1] HERAEUS QUARZGLAS GMBH,W-6450 HANAU,GERMANY

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1992年 / 149卷 / 1-2期

关键词：

D O I：

10.1016/0022-3093(92)90060-W

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

High purity fused silica with about 800 ppm OH content was irradiated with KrF laser radiation (248 nm) at temperatures between -180-degrees-C and room temperature. The laser-induced absorption at 215 nm (due to E' centers) was investigated. The generation rate of E' centers from a precursor state depends linearly on the applied energy density, indicating the presence of a one-photon generation process for E' centers in addition to the two-photon generation process from the silica network. The generation rate and relaxation of the 215 nm band is reduced at temperatures below room temperature. A luminescence band centered at 650 nm is excited during irradiation. A transient non-bridging oxygen center is postulated to explain the observed increase of the luminescence intensity with decreasing temperatures and with increasing radiation energy density.

引用

页码：115 / 121

页数：7

共 26 条

[1] DEFECT CREATION AND 2-PHOTON ABSORPTION IN AMORPHOUS SIO2 [J].