TRANSIENT 210-NM ABSORPTION IN FUSED-SILICA INDUCED BY HIGH-POWER UV LASER IRRADIATION

被引：34

作者：

LECLERC, N ^{[1
]}

PFLEIDERER, C ^{[1
]}

HITZLER, H ^{[1
]}

WOLFRUM, J ^{[1
]}

GREULICH, KO ^{[1
]}

THOMAS, S ^{[1
]}

FABIAN, H ^{[1
]}

TAKKE, R ^{[1
]}

ENGLISCH, W ^{[1
]}

机构：

[1] HERAEUS QUARZGLAS GMBH,W-6450 HANAU,GERMANY

来源：

OPTICS LETTERS | 1991年 / 16卷 / 12期

关键词：

D O I：

10.1364/OL.16.000940

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Synthetic fused silica, exposed to high-power KrF excimer laser irradiation, shows the well-known induced absorption at 210 nm owing to E' center generation. Time-resolved absorption spectroscopy reveals that this induced absorption is transient in nature. The generation rate of E' centers depends strongly on the irradiation history, the OH content, and previous high-temperature processes. In order to explain the experimental observations, a nonabsorbing state of the E' center is postulated. The recovery of the induced optical absorption in high-OH fused silica is explained as a conversion from E' centers to these nonabsorbing centers.

引用

页码：940 / 942

页数：3

共 17 条

[1] ULTRAVIOLET INDUCED DEFECT CREATION AND ANNIHILATION IN LOW-TEMPERATURE-DEPOSITED SIO2 [J].