ULTRAVIOLET INDUCED DEFECT CREATION AND ANNIHILATION IN LOW-TEMPERATURE-DEPOSITED SIO2

被引：4

作者：

DEVINE, RAB

FRANCOU, JM

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 11期

关键词：

D O I：

10.1063/1.343629

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5654 / 5656

页数：3

共 9 条

[1] LOW-TEMPERATURE DEPOSITION OF HIGH-QUALITY SILICON DIOXIDE BY PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION [J].

BATEY, J ;

TIERNEY, E .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (09) :3136-3145

[2] MULTIPHOTON ABSORPTION-COEFFICIENTS IN SOLIDS - A UNIVERSAL CURVE [J].

BRANDI, HS ;

DEARAUJO, CB .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1983, 16 (30) :5929-5936

[3] DEFECT CREATION AND 2-PHOTON ABSORPTION IN AMORPHOUS SIO2 [J].

DEVINE, RAB .

PHYSICAL REVIEW LETTERS, 1989, 62 (03) :340-340

[4] ELECTRICAL AND SPIN-RESONANCE CHARACTERISTICS OF LOW-TEMPERATURE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITED SIO2 [J].

DEVINE, RAB .

JOURNAL OF APPLIED PHYSICS, 1989, 66 (10) :4702-4708

[5]

DOORYHEE E, 1987, THESIS U PARIS

[6]

IMAI H, 1988, PHYSICS TECHNOLOGY A, P153

[7] THEORY OF DEFECTS IN VITREOUS SILICON DIOXIDE [J].

OREILLY, EP ;

ROBERTSON, J .

PHYSICAL REVIEW B, 1983, 27 (06) :3780-3795

[8] DAMAGE CENTER FORMATION IN SIO2 THIN-FILMS BY FAST ELECTRON-IRRADIATION [J].

PFEFFER, RL .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (12) :5176-5180

[9] MECHANISM OF INTRINSIC SI E'-CENTER PHOTOGENERATION IN HIGH-PURITY SILICA [J].

TSAI, TE ;

GRISCOM, DL ;

FRIEBELE, EJ .

PHYSICAL REVIEW LETTERS, 1988, 61 (04) :444-446

← 1 →