DAMAGE CENTER FORMATION IN SIO2 THIN-FILMS BY FAST ELECTRON-IRRADIATION

被引：65

作者：

PFEFFER, RL

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 57卷 / 12期

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D O I：

10.1063/1.335252

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：5176 / 5180

页数：5

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[1] COMPARISON OF HEAVY-ION, PROTON AND ELECTRON-IRRADIATION EFFECTS INVITREOUS SILICA
ANTONINI, M
CAMAGNI, P
GIBSON, PN
MANARA, A
[J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1982, 65 (1-4): : 41 - 48
[2] HEAVY-ION AND ELECTRON-IRRADIATION EFFECTS IN VITREOUS SILICA
ANTONINI, M
CAMAGNI, P
MANARA, A
MORO, L
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1981, 44 (2-3) : 321 - 330
[3] RADIATION EFFECTS IN SILICA AT LOW TEMPERATURES
ARNOLD, GW
COMPTON, WD
[J]. PHYSICAL REVIEW, 1959, 116 (04): : 802 - 811
[4] THRESHOLD ENERGY DETERMINATION IN THICK SEMICONDUCTOR SAMPLES
BOURGOIN, JC
LUDEAU, P
MASSARANI, B
[J]. REVUE DE PHYSIQUE APPLIQUEE, 1976, 11 (02): : 279 - 284
[5] DEFECTS AND IMPURITIES IN THERMAL OXIDES ON SILICON
BROWER, KL
LENAHAN, PM
DRESSENDORFER, PV
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (03) : 251 - 253
[6] ENERGY, ORIENTATION, AND TEMPERATURE DEPENDENCE OF DEFECT FORMATION IN ELECTRON IRRADIATION OF N-TYPE GERMANIUM
BROWN, WL
AUGUSTYNIAK, WM
[J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) : 1300 - 1309
[7] IRRADIATION DAMAGE IN GERMANIUM AND SILICON DUE TO ELECTRONS AND GAMMA RAYS
CAHN, JH
[J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) : 1310 - 1316
[8] CAPLAN PJ, 1980, PHYSICS MOS INSULATO
[9] CORBETT JW, 1966, ELECTRON RAD DAMAGE
[10] OXYGEN VACANCY ANNEALING IN H+ IMPLANTED SIO2
DEVINE, RAB
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (04) : 953 - 957

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