OXYGEN VACANCY ANNEALING IN H+ IMPLANTED SIO2

被引：8

作者：

DEVINE, RAB

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 56卷 / 04期

关键词：

D O I：

10.1063/1.334034

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：953 / 957

页数：5

共 22 条

[1] INTERSTITIAL MOTION DURING RADIATION-DAMAGE AND SPUTTERING PROCESSES [J].

AGULLOLOPEZ, F ;

TOWNSEND, PD .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1980, 97 (02) :575-580

[2] ELECTRON TRAPPING AND DETRAPPING CHARACTERISTICS OF ARSENIC-IMPLANTED SIO2 LAYERS [J].

DEKEERSMAECKER, RF ;

DIMARIA, DJ .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (02) :1085-1101

[3] DYNAMICS OF DEFECT CREATION BY ION-IMPLANTATION IN THERMAL SIO2 [J].

DEVINE, RAB ;

GOLANSKI, A .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (07) :2738-2740

[4] OXYGEN VACANCY CREATION IN SIO2 THROUGH IONIZATION-ENERGY DEPOSITION [J].

DEVINE, RAB .

APPLIED PHYSICS LETTERS, 1983, 43 (11) :1056-1058

[5] ISOTHERMAL ANNEALING OF E'1 DEFECTS IN ION-IMPLANTED SIO2 [J].

DEVINE, RAB .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1984, 1 (2-3) :378-382

[6] THEORY OF THE PEROXY-RADICAL DEFECT IN A-SIO2 [J].

EDWARDS, AH ;

FOWLER, WB .

PHYSICAL REVIEW B, 1982, 26 (12) :6649-6660

[7] RAMAN DIFFUSION PROFILOMETRY - OH IN VITREOUS SIO2 [J].

GALEENER, FL ;

MIKKELSEN, JC .

APPLIED PHYSICS LETTERS, 1981, 38 (05) :336-338

[8]

GRISCOM DL, J NONCRYST SOLIDS

[9]

GRISCOM DL, 1979, 33RD P FREQ CONTR S, P98

[10]

Hobbs L.W., 1980, J PHYSIQUE C, V41, DOI DOI 10.1051/JPHYSCOL:1980660

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