OPTICAL WINDOW IN STRAINED-LAYER SI/GE MICROSTRUCTURES

[1] EFFECT OF BUFFER-LAYER COMPOSITION ON NEW OPTICAL-TRANSITIONS IN SI/GE SHORT-PERIOD SUPERLATTICES [J]. PHYSICAL REVIEW B, 1988, 38 (11): : 7535 - 7553

[2] GELL MA, IIN PRESS PHYS REV B

[3] GELL MA, 1986, THESIS U NEWCASTLE U

[4] THEORY OF DIRECT OPTICAL-TRANSITIONS IN AN OPTICAL INDIRECT SEMICONDUCTOR WITH A SUPERLATTICE STRUCTURE [J]. APPLIED PHYSICS, 1974, 3 (01): : 9 - 14

[5] THEORY OF OPTICAL-TRANSITIONS IN SI/GE(001) STRAINED-LAYER SUPERLATTICES [J]. PHYSICAL REVIEW B, 1987, 36 (18): : 9683 - 9693

[6] SYMMETRICALLY STRAINED SI/GE SUPERLATTICES ON SI SUBSTRATES [J]. PHYSICAL REVIEW B, 1988, 38 (05): : 3599 - 3601

[7] STRUCTURALLY INDUCED OPTICAL-TRANSITIONS IN GE-SI SUPERLATTICES [J]. PHYSICAL REVIEW LETTERS, 1987, 58 (07) : 729 - 732

[8] THEORETICAL CALCULATIONS OF HETEROJUNCTION DISCONTINUITIES IN THE SI/GE SYSTEM [J]. PHYSICAL REVIEW B, 1986, 34 (08): : 5621 - 5634

[1] EFFECT OF BUFFER-LAYER COMPOSITION ON NEW OPTICAL-TRANSITIONS IN SI/GE SHORT-PERIOD SUPERLATTICES [J]. PHYSICAL REVIEW B, 1988, 38 (11): : 7535 - 7553

[2] GELL MA, IIN PRESS PHYS REV B

[3] GELL MA, 1986, THESIS U NEWCASTLE U

[4] THEORY OF DIRECT OPTICAL-TRANSITIONS IN AN OPTICAL INDIRECT SEMICONDUCTOR WITH A SUPERLATTICE STRUCTURE [J]. APPLIED PHYSICS, 1974, 3 (01): : 9 - 14

[5] THEORY OF OPTICAL-TRANSITIONS IN SI/GE(001) STRAINED-LAYER SUPERLATTICES [J]. PHYSICAL REVIEW B, 1987, 36 (18): : 9683 - 9693

[6] SYMMETRICALLY STRAINED SI/GE SUPERLATTICES ON SI SUBSTRATES [J]. PHYSICAL REVIEW B, 1988, 38 (05): : 3599 - 3601

[7] STRUCTURALLY INDUCED OPTICAL-TRANSITIONS IN GE-SI SUPERLATTICES [J]. PHYSICAL REVIEW LETTERS, 1987, 58 (07) : 729 - 732

[8] THEORETICAL CALCULATIONS OF HETEROJUNCTION DISCONTINUITIES IN THE SI/GE SYSTEM [J]. PHYSICAL REVIEW B, 1986, 34 (08): : 5621 - 5634