LIQUID-PHASE EPITAXY

被引：65

作者：

KUPHAL, E

机构：

[1] Forschungsinstitut, Deutsche Bundespost Telekom, Darmstadt, W-6100

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1991年 / 52卷 / 06期

关键词：

D O I：

10.1007/BF00323650

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper presents a comprehensive review of the method of liquid phase epitaxy (LPE) of semiconductors. In Sect. 1 the physical principles including diffusion-limited growth and solid-liquid phase diagrams are treated in detail. In Sect. 2 technological aspects and various kind of growth systems including industrial versions are described. Section 3 summarizes the relevant properties of LPE grown layers. Section 4 contains the application of LPE to the material system InP/InGaAs/InGaAsP as a model system. In Sect. 5 the advantages and weaknesses of LPE with respect to device applications in comparison with competing methods are discussed, and finally we attempt to predict the future direction of LPE.

引用

页码：380 / 409

页数：30

共 134 条

[51]

ISHIKAWA H, 1982, IEEE J QUANTUM ELECT, V18, P1704, DOI 10.1109/TMTT.1982.1131310

[52] LIQUID-PHASE EPITAXIAL-GROWTH OF INXGA1-XAS/INP NEAR SOLID INSTABILITY [J].