BI ON SI(111) - 2 PHASES OF THE ROOT-3X-ROOT-3 SURFACE RECONSTRUCTION

被引：64

作者：

SHIODA, R

KAWAZU, A

BASKI, AA

QUATE, CF

NOGAMI, J

机构：

[1] UNIV TOKYO,DEPT APPL PHYS,TOKYO 113,JAPAN

[2] STANFORD UNIV,EL GINZTON LAB,STANFORD,CA 94305

[3] UNIV WISCONSIN,SURFACE STUDIES LAB,MILWAUKEE,WI 53201

[4] UNIV WISCONSIN,DEPT PHYS,MILWAUKEE,WI 53201

来源：

PHYSICAL REVIEW B | 1993年 / 48卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.48.4895

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Scanning tunneling microscopy (STM) has been used to determine the surface structure of the square-root 3 X square-root 3 reconstruction induced by Bi on the Si(111) surface. The STM images show that there are two distinct ordered surfaces with square-root 3 X square-root 3 periodicity. At 1/3-monolayer Bi coverage, the square-root 3 X square-root 3 phase consists of one Bi adatom per unit cell adsorbed at T4 Sites on a Si(111) bilayer. At nearly one monolayer of Bi coverage, STM images show protrusions with a complex shape dependent on bias voltage. These STM images are discussed and compared with structural models derived from previous experimental studies.

引用

页码：4895 / 4898

页数：4

共 21 条

[1] PHOTOELECTRON DIFFRACTION STUDY OF THE ATOMIC GEOMETRY OF THE SI(111)SQUARE-ROOT-3 X SQUARE-ROOT-3-SB SURFACE [J].