STUDIES OF DEEP CHROMIUM ACCEPTOR LEVELS IN INP

[1] A COMPARISON OF SIMPLE THEORETICAL-MODELS FOR THE PHOTOIONIZATION OF IMPURITIES IN SEMICONDUCTORS [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1980, 13 (10): : 2027 - 2039

[2] ANTYPAS GA, 1976, GALLIUM ARSENIDE REL, P55

[3] PHOTOCONDUCTIVITY IN N-TYPE GAAS-O ASSOCIATED WITH THE DEEP LEVEL AT 0.4 EV [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1980, 13 (04): : 635 - 650

[4] CR2+(3D4) ABSORPTION IN GAAS [J]. SOLID STATE COMMUNICATIONS, 1980, 33 (09) : 983 - 985

[5] NICKEL, A PERSISTENT INADVERTENT CONTAMINANT IN DEVICE-GRADE VAPOR EPITAXIALLY GROWN GALLIUM-PHOSPHIDE [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1977, 10 (18) : 2545 - 2554

[6] DECAY OF THE DEEP-LEVEL EXTRINSIC PHOTOCONDUCTIVITY RESPONSE OF N-GAAS(CR,SI) AT LIQUID-HELIUM TEMPERATURE [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (18): : L725 - L728

[7] STUDY OF THE DEEP ACCEPTOR LEVELS OF IRON IN INP [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (23): : 5145 - 5155

[8] Fung S., 1980, Semi-Insulating III-V Materials, P154

[9] ISELER GW, 1978, GALLIUM ARSENIDE REL, P144

[10] ESR IDENTIFICATION OF IRON DOUBLE ELECTRON TRAP STATE IN GAP [J]. SOLID STATE COMMUNICATIONS, 1977, 21 (12) : 1073 - 1075

[1] A COMPARISON OF SIMPLE THEORETICAL-MODELS FOR THE PHOTOIONIZATION OF IMPURITIES IN SEMICONDUCTORS [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1980, 13 (10): : 2027 - 2039

[2] ANTYPAS GA, 1976, GALLIUM ARSENIDE REL, P55

[3] PHOTOCONDUCTIVITY IN N-TYPE GAAS-O ASSOCIATED WITH THE DEEP LEVEL AT 0.4 EV [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1980, 13 (04): : 635 - 650

[4] CR2+(3D4) ABSORPTION IN GAAS [J]. SOLID STATE COMMUNICATIONS, 1980, 33 (09) : 983 - 985

[5] NICKEL, A PERSISTENT INADVERTENT CONTAMINANT IN DEVICE-GRADE VAPOR EPITAXIALLY GROWN GALLIUM-PHOSPHIDE [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1977, 10 (18) : 2545 - 2554

[6] DECAY OF THE DEEP-LEVEL EXTRINSIC PHOTOCONDUCTIVITY RESPONSE OF N-GAAS(CR,SI) AT LIQUID-HELIUM TEMPERATURE [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (18): : L725 - L728

[7] STUDY OF THE DEEP ACCEPTOR LEVELS OF IRON IN INP [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (23): : 5145 - 5155

[8] Fung S., 1980, Semi-Insulating III-V Materials, P154

[9] ISELER GW, 1978, GALLIUM ARSENIDE REL, P144

[10] ESR IDENTIFICATION OF IRON DOUBLE ELECTRON TRAP STATE IN GAP [J]. SOLID STATE COMMUNICATIONS, 1977, 21 (12) : 1073 - 1075