METALORGANIC CHEMICAL-VAPOR-DEPOSITION GROWTH OF GAAS-ER USING ER(C4H9C5H4)(3)

被引：1

作者：

FANG, XM ^{[1
]}

LI, YB ^{[1
]}

LANGER, DW ^{[1
]}

SOLOMON, JS ^{[1
]}

机构：

[1] UNIV DAYTON,RES INST,DAYTON,OH 45469

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1994年 / 23卷 / 12期

关键词：

4F-INTRASHELL EMISSION; ERBIUM; METALORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD); RARE EARTHS;

D O I：

10.1007/BF02649889

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Erbium doped GaAs has been grown by metalorganic chemical vapor deposition using a novel liquid precursor: Tris(n-butylcyclopentadienyl)erbium, Er(C4H9C5H4)(3). Erbium doping as high as 1.2 x 10(19)cm(-3) has been realized. The morphology was excellent at growth temperatures near 620 degrees C. The erbium concentration was found to depend on growth temperatures due to incomplete pyrolysis of the erbium metalorganic compound. The erbium-related PL intensity was decreased when the erbium concentration exceeded similar to 1.2 x 10(19)cm(-3).

引用

页码：1269 / 1272

页数：4

共 15 条

[1] PHOTOLUMINESCENCE EXCITATION MEASUREMENTS ON GAAS-ER GROWN BY MOLECULAR-BEAM EPITAXY [J].