QUASI-SCHOTTKY BARRIER DIODE ON N-GA-0.47IN-0.53 AS USING A FULLY DEPLETED P+-GA-0.47IN-0.53 AS LAYER GROWN BY MOLECULAR-BEAM EPITAXY

被引：23

作者：

CHEN, CY

CHO, AY

CHENG, KY

GARBINSKI, PA

机构：

来源：

关键词：

D O I：

10.1063/1.93117

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：401 / 403

页数：3

共 14 条

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